2N5401 High Current PNP Bipolar Transistor

Characteristics of the 2N5401 bipolar transistor

• Type – p-n-p
• Collector-Emitter Voltage: -150 V
• Collector-Base Voltage: -160 V
• Emitter-Base Voltage: -5 V
• Collector Current: -0.6 A
• Collector Dissipation – 0.625 W
• DC Current Gain (h_fe) – 60 to 240
• Transition Frequency – 100 MHz
• Operating and Storage Junction Temperature Range -55 to +150 °C